Gujiao Hmois Co., Ltd.
Our Factory: Since 2007, Hmois Sic Research Lab has
begun it’s researches in Sic single crystal materials. With an
investment of over 200 million RMB, HMOIS owns the whole R&D
production Line for Sic material ranging from silicon carbide
preparation, crystal growth,wafer processing to epitaxial testing,
capable of an annual output of 2 tons of high-purity silion carbide
powder and 3000pcs of high purity semi-insulating wafer, largely
promoting the developmentof the domestic semiconductor materials.
Supported by relevant national ministries and foreign professional
experts from sweden, germany, Russia and Ukraine over
efforts. Hmois has successfully created the colorless D-grade
moissanite, and created HMOIS product series.